tsm2n60 600v n-channel power mosfet 1/8 version: e11 to - 220 to - 251 (ipak) to - 252 (dpak) general description the tsm2n60 is used an advanced termination scheme to provide enhanced voltage-blocking capability wit hout degrading performance over time. in addition, this advanced mosfet is designed to withstand high energ y in avalanche and commutation modes. the new energy eff icient design also offers a drain- to-source diode with a fast recovery time. designed for high voltage, high speed switching applications in power supplies, co nverters and pwm motor controls, these devices are particula rly well suited for bridge circuits where diode spe ed and commutating safe operating areas are critical and o ffer additional and safety margin against unexpecte d voltage transients. features robust high voltage termination avalanche energy specified diode is characterized for use in bridge circuits source to drain diode recovery time comparable to a discrete fast recovery diode. ordering information part no. package packing tsm2n60cp ro to-252 2.5kpcs/ 13 reel tsm2n60ch c5 to-251 75pcs / tube tsm2n60cz c0 to-220 50pcs / tube absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v continuous drain current i d 2 a pulsed drain current i dm 9 a continuous source current (diode conduction) a,b i s 1 a single pulse drain to source avalanche energy (v dd = 100v, v gs =10v, i as =2a, l=10mh, r g =25 ) eas 20 mj maximum power dissipation @ tc = 25 o c to-251 / to-252 p dtot 70 w to-220 70 operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg -55 to +150 o c product summary v ds (v) r ds(on) ( ) i d (a) 600 5 @ v gs =10v 1 pin definition : 1. gate 2. drain 3. source block diagram n-channel mosfet
tsm2n60 600v n-channel power mosfet 2/8 version: e11 thermal performance parameter symbol limit unit thermal resistance - junction to case to-251 / to-252 r ? jc 2.87 o c/w to-220 2.32 thermal resistance - junction to ambient to-251 / to-252 r ? ja 110 o c/w to-220 62.5 notes: surface mounted on fr4 board t 10sec electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 600 -- -- v drain-source on-state resistance v gs = 10v, i d = 1a r ds(on) -- 4.4 5 gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2.0 -- 4.0 v zero gate voltage drain current v ds = 600v, v gs = 0v i dss -- -- 10 ua gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na forward transconductance v ds = 40v, i d = 1a g fs -- 5 -- s diode forward voltage i s = 2a, v gs = 0v v sd -- -- 1.6 v dynamic b total gate charge v ds = 400v, i d = 2a, v gs = 10v q g -- 13 22 nc gate-source charge q gs -- 2 -- gate-drain charge q gd -- 6 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 435 -- pf output capacitance c oss -- 56 -- reverse transfer capacitance c rss -- 9.2 -- switching c turn-on delay time v gs = 10v, i d = 2a, v dd = 300v, r g = 18 t d(on) -- 12 -- ns turn-on rise time t r -- 21 -- turn-off delay time t d(off) -- 30 -- turn-off fall time t f -- 24 -- notes: a. pulse test: pulse width <=300us, duty cycle <=2% b. for design reference only, not subject to produc tion testing. c. switching time is essentially independent of operating temperature.
tsm2n60 600v n-channel power mosfet 3/8 version: e11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm2n60 600v n-channel power mosfet 4/8 version: e11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) on-resistance vs. gate-source voltage threshold voltage maximum safe operating area normalized thermal transient impedance, junction-to -ambient
tsm2n60 600v n-channel power mosfet 5/8 version: e11 to-220 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code to-220 dimension dim millimeters inches min max min max a 10.000 10.500 0.394 0.413 b 3.740 3.910 0.147 0.154 c 2.440 2.940 0.096 0.116 d - 6.350 - 0.250 e 0.381 1.106 0.015 0.040 f 2.345 2.715 0.092 0.058 g 4.690 5.430 0.092 0.107 h 12.700 14.732 0.500 0.581 j 14.224 16.510 0.560 0.650 k 3.556 4.826 0.140 0.190 l 0.508 1.397 0.020 0.055 m 27.700 29.620 1.060 1.230 n 2.032 2.921 0.080 0.115 o 0.255 0.610 0.010 0.024 p 5.842 6.858 0.230 0.270
tsm2n60 600v n-channel power mosfet 6/8 version: e11 to-251 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code to-251 dimension dim millimeters inches min max min max a 2.10 2.50 0.083 0.098 b 0.65 1.05 0.026 0.041 b1 0.58 0.62 0.023 0.024 b2 4.80 5.20 0.189 0.205 b3 0.68 0.72 0.027 0.028 c 0.35 0.65 0.014 0.026 c1 0.40 0.60 0.016 0.024 d 5.30 5.70 0.209 0.224 e 6.30 6.70 0.248 0.264 e 2.30 bsc 0.09 bsc l 7.00 8.00 0.276 0.315 l1 1.40 1.80 0.055 0.071 l2 1.30 1.70 0.051 0.067 l3 0.50 0.90 0.020 0.035
tsm2n60 600v n-channel power mosfet 7/8 version: e11 to-252 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code to-252 dimension dim millimeters inches min max min max a 2.30 bsc 0.090 bsc b 10.20 10.80 0.402 0.425 c 5.30 5.70 0.209 0.224 d 6.30 6.70 0.248 0.264 e 2.10 2.50 0.083 0.098 f 0.00 0.20 0.000 0.008 g 4.80 5.20 0.189 0.205 g1 0.40 0.80 0.016 0.031 h 0.40 0.60 0.016 0.024 h1 0.35 0.65 0.014 0.026 j 3.35 3.65 0.132 0.144 k 0.50 1.10 0.020 0.043 l 0.90 1.50 0.035 0.059 m 1.30 1.70 0.051 0.067
tsm2n60 600v n-channel power mosfet 8/8 version: e11 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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